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UJC06505K - MOSFET

Description

United Silicon Carbide's cascode products co-package its xJ series highperformance SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Features

  • w Max. on-resistance RDS(on)max of 45mW w Standard 12V gate drive w Maximum operating temperature of 150°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical.

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Datasheet Details

Part number UJC06505K
Manufacturer UnitedSiC
File Size 439.31 KB
Description MOSFET
Datasheet download datasheet UJC06505K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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xJ SiC Series | 45mW - 650V SiC Cascode | UJC06505K Datasheet Description United Silicon Carbide's cascode products co-package its xJ series highperformance SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. CASE G (1) CASE D (2) 123 S (3) Part Number UJC06505K Package TO-247-3L Marking UJC06505K Features w Max.
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