UF3N170400Z Datasheet (UnitedSiC)

UF3N170400Z, JFET

United Silicon Carbide, Inc offers the high-performance G3 SiC normally-on JFET transistors.

This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss.

The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal

UF3N170400Z Features

* Typical on-resistance RDS(on),typ of 400mΩ

* Voltage controlled

* Maximum operating temperature of 175°C

* Extremely fast switching not dependent on temperature

* Low gate charge

* Low intrinsic capacitance

* RoHS compliant Typical applications

* Over Current Protec