Description
The CHK9014-99F is a 55W Gallium Nitride High Electron Mobility Transistor.
Features
- Wide band capability up to 13GHz.
- Pulsed and CW operating modes.
- GaN technology: High Pout & High PAE.
- DC bias: VD up to 30V.
- Chip size: 0.88x4.27x0.1mm.
- RoHS N°2011/65.
- REACh N°1907/2006
Main Electrical Characteristics
Tref= +25°C, Pulsed mode, Freq=12GHz, VDS=30V, ID_Q=0.85A
Symbol
Parameter
Min Typ
GSS
Small Signal Gain
13
PSAT
Saturated Output Power
60
PAE
Max Power Added Efficiency
50
GPAE_MAX Associated Gain at Max PAE
8
These values are.
CHK9014-99F-UnitedMonolithicSemiconductors.pdf
