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CHA6653-98F - Power Amplifier

Description

The CHA6653-98F is a four stages monolithic GaAs High Power Amplifier producing 1.8 Watt output power.

It is highly linear, with gain control capability and integrates a power detector.

ESD protections are included.

Features

  • Broadband performances: 27-34GHz.
  • 32dBm saturated power.
  • 38dBm OIP3.
  • 23dB gain.
  • DC bias: Vd = 6.0Volt @ Idq = 0.9A.
  • Chip size 3.61x3.46x0.07mm Output power & PAE vs frequency Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3 Min Typ Max Unit 27 34 GHz 23 dB 32 dBm 38 dBm Ref. : DSCHA66530301 - 27 Oct 20 1/18 Specifications subject to change without not.

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Datasheet Details

Part number CHA6653-98F
Manufacturer United Monolithic Semiconductors
File Size 0.97 MB
Description Power Amplifier
Datasheet download datasheet CHA6653-98F Datasheet

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Other Datasheets by United Monolithic Semiconductors

Part Number Description
CHA6653-QXG Power Amplifier
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA6653-98F 27-34GHz Power Amplifier GaAs Monolithic Microwave IC Description The CHA6653-98F is a four stages monolithic GaAs High Power Amplifier producing 1.8 Watt output power. It is highly linear, with gain control capability and integrates a power detector. ESD protections are included. It is designed for Telecommunication application. The circuit is manufactured with a pHEMT process, 0.15µm gate length. Main Features ■ Broadband performances: 27-34GHz ■ 32dBm saturated power ■ 38dBm OIP3 ■ 23dB gain ■ DC bias: Vd = 6.0Volt @ Idq = 0.9A ■ Chip size 3.61x3.46x0.07mm Output power & PAE vs frequency Main Electrical Characteristics Tamb.