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CHA6551-99F - 17-24GHz Power Amplifier

Description

The CHA6551-99F is a three stage monolithic GaAs high power circuit producing 1.6 Watt output power.

It is highly linear, with possible gain control RFIN and integrates a power detector.

ESD protections are included.

Features

  • Broadband performances: 17-24GHz.
  • 32dBm saturated power.
  • 39dBm OIP3.
  • 22dB Gain.
  • DC bias: Vd = 4.0 Volt @ Id = 880mA.
  • Chip size 3.60x3.46x0.07mm Output Power & PAE vs frequency Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3 Min Typ Max Unit 17 24 GHz 22 dB 32 dBm 39 dBm Ref. : DSCHA65510301 - 27 Oct 20 1/18 Specifications subject to change without no.

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Datasheet Details

Part number CHA6551-99F
Manufacturer United Monolithic Semiconductors
File Size 0.99 MB
Description 17-24GHz Power Amplifier
Datasheet download datasheet CHA6551-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA6551-99F 17-24GHz Power Amplifier GaAs Monolithic Microwave IC Description The CHA6551-99F is a three stage monolithic GaAs high power circuit producing 1.6 Watt output power. It is highly linear, with possible gain control RFIN and integrates a power detector. ESD protections are included. It is designed for a wide range of applications: Space, military and automotive communication systems The circuit is manufactured with a pHEMT process, 0.15µm gate length. Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 DET Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 REF RFOUT Main Features ■ Broadband performances: 17-24GHz ■ 32dBm saturated power ■ 39dBm OIP3 ■ 22dB Gain ■ DC bias: Vd = 4.0 Volt @ Id = 880mA ■ Chip size 3.60x3.46x0.07mm Output Power & PAE vs frequency Main Electrical Characteristics Tamb.
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