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CHA5290 - 17.7-24GHz Medium Power Amplifier

General Description

The CHA5290 is a high gain four-stage monolithic medium power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounds.

Key Features

  • Performances : 17.7 -24GHz.
  • 26dBm output power @ 1dB comp. gain.
  • 26 dB ± 1dB gain.
  • DC power consumption, 400mA @ 6V.
  • Chip size : 3.43 x 1.57 x 0.05 mm Vd1 Vd2 Vd3 Vd4 Vg1,2 Vg3 Vg4 Vd4 34 30 26 22 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 S11 (dB) S21 (dB) S22 (dB) -30 14 16 18 20 22 24 26 28 30 32 34 Frequency (GHz) Typical on jig Measurements Main Characteristics Tamb. = 25°C Symbol Parameter Fop Op.

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Datasheet Details

Part number CHA5290
Manufacturer United Monolithic Semiconductors
File Size 116.04 KB
Description 17.7-24GHz Medium Power Amplifier
Datasheet download datasheet CHA5290 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA5290 17.7-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5290 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Performances : 17.7 -24GHz ■ 26dBm output power @ 1dB comp. gain ■ 26 dB ± 1dB gain ■ DC power consumption, 400mA @ 6V ■ Chip size : 3.43 x 1.57 x 0.