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CHA2110-98F - 7-12GHz LNA

Description

The CHA2110-98F is a monolithic two-stage wide band low noise amplifier circuit.

It is self-biased.

telecommunication systems.

Features

  • Broadband performances: 7-12GHz.
  • Linear gain: 19dB.
  • Return Losses: 12dB.
  • Noise Figure: 1.2dB.
  • Output power @ 1dBcomp: 11dBm.
  • DC bias: Vd=4 Volt@Id=45mA.
  • Chip size 1.93x1.3x0.1mm 25 5.0 24 4.5 23 4.0 22 3.5 21 3.0 20 S21 2.5 19 2.0 18 1.5 17 NF 1.0 16 0.5 15 0.0 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz) Gain and NF versus frequency S21 (dB) NF (dB) Main Electrical Characteristics Tamb. = +25°C; pads 1A, 1B, 2A.

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Datasheet Details

Part number CHA2110-98F
Manufacturer United Monolithic Semiconductors
File Size 673.10 KB
Description 7-12GHz LNA
Datasheet download datasheet CHA2110-98F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA2110-98F 7-12GHz LNA GaAs Monolithic Microwave IC Description The CHA2110-98F is a monolithic two-stage wide band low noise amplifier circuit. It is self-biased. VD1 VD2 It is designed for military, space and telecommunication systems. IN OUT The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate and air bridges. It is available in chip form. Main Features ■ Broadband performances: 7-12GHz ■ Linear gain: 19dB ■ Return Losses: 12dB ■ Noise Figure: 1.2dB ■ Output power @ 1dBcomp: 11dBm ■ DC bias: Vd=4 Volt@Id=45mA ■ Chip size 1.93x1.3x0.1mm 25 5.0 24 4.5 23 4.0 22 3.5 21 3.0 20 S21 2.5 19 2.0 18 1.5 17 NF 1.0 16 0.5 15 0.0 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.
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