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CHA2066-99F - Low Noise Amplifier

Description

The CHA2066-99F is a two-stage wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate lithography.

It is supplied in chip form.

Features

  • A B C D E NC.
  • Broad band performance 10-16GHz.
  • 2.0dB noise figure, 10-16GHz.
  • 16dB gain,  0.5dB gain flatness.
  • Low DC power consumption, 50mA.
  • 20dBm 3rd order intercept point.
  • Chip size: 1,52 x 1,08 x 0.1mm On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol Parameter Min Typ Max NF Noise figure, 10-16GHz 2.0 2.5 G Gain 14 16 G Gain flatness  0.5  1.0 ESD Protections : Electrostatic discharge sensitive device observe handling.

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Datasheet Details

Part number CHA2066-99F
Manufacturer United Monolithic Semiconductors
File Size 410.62 KB
Description Low Noise Amplifier
Datasheet download datasheet CHA2066-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA2066-99F 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2066-99F is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate lithography. It is supplied in chip form. G1 7272 NC G2 Vd RFout UMS Main Features A B C D E NC ■ Broad band performance 10-16GHz ■ 2.0dB noise figure, 10-16GHz ■ 16dB gain,  0.5dB gain flatness ■ Low DC power consumption, 50mA ■ 20dBm 3rd order intercept point ■ Chip size: 1,52 x 1,08 x 0.1mm On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol Parameter Min Typ Max NF Noise figure, 10-16GHz 2.0 2.5 G Gain 14 16 G Gain flatness  0.5  1.
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