Description
The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages.
Features
- S.
- RDS(ON) ≤ 0.32 Ω @ VGS =10V, ID =2.0A RDS(ON) ≤ 0.38 Ω @ VGS =4.5V, ID =2.0A.
- Design Optimized for 5V Gate Drives.
- Can be Driven Directly from QMOS, NMOS, TTL Circuits.
- SOA is Power Dissipation Limited.
- Nanosecond Switching Speeds.
- Linear Transfer Characteristics.
- SYMBOL
Drain
Power MOSFET
Gate
Source
www. unisonic. com. tw Copyright © 2022 Unisonic Technologies Co. , Ltd
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QW-R502-511.J
UT2N10.
UT2N10-UnisonicTechnologies.pdf
