Description
TO-220
The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.This device is suitable for use as a load switch or in PWM applications.1 TO-251
Features
- S TO-220.
- RDS(ON) ≤ 4.6 mΩ @ VGS=10 V, ID=50A.
- RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A
TO-220F/TO-251/TO-252/TO-252D/TO-263.
- RDS(ON) ≤ 5.3 mΩ @ VGS=10 V, ID=50A.
- RDS(ON) ≤ 8.0 mΩ @ VGS=4.5 V, ID=40A
PDFN5×6.
- RDS(ON) ≤ 4.0 mΩ @ VGS=10 V, ID=50A.
- RDS(ON) ≤ 5.8 mΩ @ VGS=4.5 V, ID=40A.
- SYMBOL
1 TO-252D
1
Power MOSFET
1 TO-220F
1 TO-252 1
PDFN5×6
TO-263
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QW-R502-193.M
UT100N03
Power MOSFET.
UT100N03-UnisonicTechnologies.pdf
