3N60 Datasheet (Unisonic Technologies)

3N60, N-CHANNEL POWER MOSFET

The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

This power MOSFET is usually used at high speed switching applications in po

3N60 Features

* VDS = 600V, ID = 3A

* RDS(ON) < 3.6Ω @VGS = 10 V

* Ultra low gate charge ( typical 18 nC )

* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL Po