Description
UM5062 QFN3 1.4×1.1
The UM5062 ESD protection diode is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s.It
Features
- large cross-sectional area junctions for conducting high transient currents, offers desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. The UM5062 ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UM5062 is available in a QFN3 1.4mm×1.1mm pa.
UM5062-UnionSemiconductor.pdf
