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TTJ06N04AT Wuxi Unigroup Microelectronics Company
40V N-Channel Trench MOSFET
FEATURES
Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications
APPLICATIONS
Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial
Device Marking and Package Information
Device
Package
Marking
TTJ06N04AT
SOP-8
06N04AT
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Drain-Source Voltage (VGS = 0V) Continuous Drain Current
Pulsed Drain Current
(note1)
Gate-Source Voltage
Single Pulse Avalanche Energy
(note2)
Avalanche Current
Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range
VDSS ID IDM
VGSS EAS IAs PD TJ, Tstg
40 6 24 ±20
TTJ06N04AT Datasheet
