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UT4413 - P-CHANNEL ENHANCEMENT MODE

Description

The UT4413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • ES.
  • RDS(ON) = 8.5mΩ @VGS = -10 V.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Drain.
  • Pb-free plating product number: UT4413L Gate Source.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UT4413 P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION Power MOSFET The UT4413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON) = 8.5mΩ @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL Drain *Pb-free plating product number: UT4413L Gate Source „ ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT4413-S08-R UT4413L-S08-R UT4413-S08-T UT4413L-S08-T Package SOP-8 SOP-8 Packing Tape Reel Tube www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-198.A Free Datasheet http://www.datasheet4u.
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