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UT20PP03 - P-CHANNEL POWER MOSFET

Description

The UT20PP03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S.
  • RDS(ON) ≤ 20 mΩ @ VGS=-10V, ID=-10A.
  • RDS(ON) ≤ 27.5 mΩ @ VGS=-4.5V, ID=-10A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT20PP03 P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UT20PP03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 20 mΩ @ VGS=-10V, ID=-10A * RDS(ON) ≤ 27.5 mΩ @ VGS=-4.5V, ID=-10A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT20PP03L-S08-R UT20PP03G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 12345678 S1 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel  MARKING www.unisonic.com.
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