USC120R040B - 57A 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET

UTC

The USC120R040B by UTC is a 57A 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET. Below is the official datasheet preview.

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USC120R040B 57A 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET by UTC - Datasheet Preview — Official preview page of the **USC120R040B** 57A 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET datasheet (UTC).

Datasheet Details

Part number	USC120R040B
Manufacturer	UTC
File Size	1.10 MB
Description	57A 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET
Datasheet	USC120R040B-UTC.pdf
Additional preview pages of the USC120R040B datasheet.

USC120R040B Product details

Description

SiC The material can achieve high voltage with most carrier devices (MOSFET) with fast device structure characteristics, so it can realize the three characteristics of "high voltage", "low on resistance" and "high frequency" at the same time.

Features

S.
RDS(ON) ≤ 53 mΩ @ VGS=18V, ID=30A.
High Blocking Voltage.
High Frequency Operation.
Low on-resistance.
Fast intrinsic diode with low reverse recovery.
100% avalanche tested.

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Published: Aug 14, 2025 |