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UK3919 - SWITCHING N-CHANNEL POWER MOSFET

Description

This UK3919 N-Channel Logic Level MOSFET is produced using UTC Semiconductor advanced Power Trench process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially.

Features

  • S.
  • RDS(ON) = 5.6mΩ @VGS = 10 V.
  • Low capacitance.
  • Optimized gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain.
  • Pb-free plating product number:UK3919L 1.Gate 3.Source.

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UNISONIC TECHNOLOGIES CO., LTD UK3919 SWITCHING N-CHANNEL POWER MOSFET Power MOSFET „ DESCRIPTION This UK3919 N-Channel Logic Level MOSFET is produced using UTC Semiconductor advanced Power Trench process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially. The UK3919 is well suited for where low in-line power loss is needed in a very small outline surface mount package, such as low voltage and battery powered applications. „ FEATURES * RDS(ON) = 5.6mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain *Pb-free plating product number:UK3919L 1.Gate 3.