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UF630 - N-CHANNEL POWER MOSFETS

Description

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Features

  • S.
  • RDS(ON) < 0.4Ω@ VGS = 10V, ID = 5.0A.
  • Ultra Low Gate Charge ( typical 19 nC ).
  • Low Reverse Transfer Capacitance ( CRSS = typical 80 pF ).
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability.
  • SYMBOL 11 TO-220 TO-220F 11 TO-220F1 TO-220F2 1 TO-262 1 TO-263 1 TO-251 1 TO-252 SOP-8.

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Other Datasheets by Unisonic Technologies

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * RDS(ON) < 0.4Ω@ VGS = 10V, ID = 5.
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