F9N100-FC N-CHANNEL POWER MOSFET

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD F9N100-FC Preliminary 9.0A, 1000V N-CHANNEL POWER MOSFET POWER MOSFET * .
The UTC F9N100-FC N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode.

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Datasheet Specifications

Part number: F9N100-FC
Manufacturer: UTC
File Size: 199.68 KB
Datasheet: F9N100-FC-UTC.pdf
Description: N-CHANNEL POWER MOSFET

Features

* RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=4.5A
* Fast body diode MOSFET technology
* Low switching losses due to reduced Qrr
* Fast Switching Speeds
* 100% avalanche tested
* Linear Transfer Characteristics
* High Input Impedance
* Avalanche energy tested
* SYMBOL
* OR

Applications

* such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

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F9N100-FC N-CHANNEL POWER MOSFET UTC

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