Datasheet4U Logo Datasheet4U.com

F9N100-FC - N-CHANNEL POWER MOSFET

Description

The UTC F9N100-FC N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode.

is designed high voltage, high speed power switching applications such.

such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=4.5A.
  • Fast body diode MOSFET technology.
  • Low switching losses due to reduced Qrr.
  • Fast Switching Speeds.
  • 100% avalanche tested.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Avalanche energy tested.
  • SYMBOL.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
F9NK90Z STBF9NK90Z STMicroelectronics

Other Datasheets by Unisonic Technologies

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD F9N100-FC Preliminary 9.0A, 1000V N-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UTC F9N100-FC N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode. is designed high voltage, high speed power switching applications such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.  FEATURES * RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=4.
Published: |