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F75NM60Z - 600V N-CHANNEL SUPER-JUNCTION MOSFET

Datasheet Summary

Description

The UTC F75NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications.

such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

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Features

  • S.
  • RDS(ON) ≤ 46 mΩ @ VGS=10V, ID=35A.
  • Fast body diode MOSFET technology.
  • Low switching losses due to reduced Qrr.
  • Single Pulse Avalanche Energy Rated.
  • Fast Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Avalanche energy tested.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2024 Unisonic Technologies Co. , Ltd 1 of 8 QW-R205-905.B F75NM60Z.

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Datasheet Details

Part number F75NM60Z
Manufacturer UTC
File Size 719.94 KB
Description 600V N-CHANNEL SUPER-JUNCTION MOSFET
Datasheet download datasheet F75NM60Z Datasheet
Additional preview pages of the F75NM60Z datasheet.

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    UNISONIC TECHNOLOGIES CO., LTD F75NM60Z 75A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC F75NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.  FEATURES * RDS(ON) ≤ 46 mΩ @ VGS=10V, ID=35A * Fast body diode MOSFET technology * Low switching losses due to reduced Qrr * Single Pulse Avalanche Energy Rated * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Avalanche energy tested  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-905.
    Published: |