F2N60 600V N-CHANNEL POWER MOSFET

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD F2N60 2.0A, 600V N-CHANNEL POWER MOSFET * .
The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching app.

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Datasheet Specifications

Part number: F2N60
Manufacturer: UTC
File Size: 223.80 KB
Datasheet: F2N60-UTC.pdf
Description: 600V N-CHANNEL POWER MOSFET

Features

* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A
* Fast body diode MOSFET technology
* Ultra Low gate charge (typical 16nC)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
* SYMBOL Power MOSFET
* ORDERING INFORMATION Orderi

Applications

* such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to

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F2N60 600V N-CHANNEL POWER MOSFET UTC

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