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9NM60-FDS - N-CHANNEL MOSFET

General Description

The UTC 9NM60-FDS is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) ≤ 0.6Ω @ VGS=10V, ID=4.5A.
  • Fast Switching Capability.
  • Avalanche Energy Tested.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 9NM60-FDS 9A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 9NM60-FDS is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.  FEATURES * RDS(ON) ≤ 0.6Ω @ VGS=10V, ID=4.5A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 9NM60L-TN3-R 9NM60G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS Packing Tape Reel  MARKING www.unisonic.com.