7N60A Datasheet (UTC) - N-CHANNEL MOSFET

7N60A, N-CHANNEL MOSFET

The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

This power MOSFET is well suited for high ef

7N60A Features

* VDS = 600V

* ID = 7A

* RDS(ON) = 1.2Ω @VGS = 10 V

* Ultra low gate charge (typical 28 nC )

* Low reverse transfer Capacitance (CRSS= typical 12 pF )

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

* SYMBOL 2