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5N120 - N-CHANNEL MOSFET

Description

The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S0.
  • RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 5N120 5A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 5N120L-T47-T 5N120G-T47-T Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-532.
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