Datasheet4U Logo Datasheet4U.com

3N50-CB - N-CHANNEL MOSFET

Description

The UTC 3N50-CB is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology.

This technology allows a minimum on-state resistance and superior switching performance.

Features

  • RDS(ON) < 3.0Ω @ VGS = 10V, ID = 1.5A.
  • High Switching Speed.
  • 100% Avalanche Tested.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
3N50 N-Channel MOSFET Transistor Inchange Semiconductor
3N50K-MK N-CHANNEL POWER MOSFET Unisonic Technologies
3N50Z N-CHANNEL POWER MOSFET Unisonic Technologies
3N55 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Unisonic Technologies

Part Number Description
3N50 N-CHANNEL POWER MOSFET
3N55-CDQ 550V N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 3N50-CB Preliminary 3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N50-CB is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 3N50-CB is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.  FEATURES * RDS(ON) < 3.0Ω @ VGS = 10V, ID = 1.5A * High Switching Speed * 100% Avalanche Tested  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
Published: |