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2SC3669 - NPN EPITAXIAL SILICON TRANSISTOR

Features

  • S.
  • Low saturation voltage VCE(SAT)=0.5V (Max. ).
  • High speed switching time: TSTG=1.0μs (Typ. ).

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS  FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0μs (Typ.)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 2SC3669G-x-AA3-R - 2SC3669G-x-AB3-R 2SC3669L-x-TM3-T 2SC3669G-x-TM3-T 2SC3669L-x-TN3-R 2SC3669G-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-223 SOT-89 TO-251 TO-252 Pin Assignment 123 BCE BCE BCE BCE Packing Tape Reel Tape Reel Tube Tape Reel  MARKING SOT-223 SOT-89 TO-251 / TO-252 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-015.
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