2N65 Datasheet (UTC) - 650V N-CHANNEL POWER MOSFET

2N65, 650V N-CHANNEL POWER MOSFET

The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

This power MOSFET is usually used at high speed switching applications in power supplies

2N65 Features

* RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A

* Ultra Low gate charge (typical 45nC)

* Low reverse transfer capacitance (CRSS = typical 9 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL 2.Drain 1 TO-252D 1 TO-