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08NM65-V - N-CHANNEL MOSFET

General Description

The UTC 08NM65-V is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(on) < 7.3Ω @ VGS=10V, ID=0.4A.
  • High breakdown voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 08NM65-V 0.8A, 650V N-CHANNEL SUPER-JUNCTION MOSFET Power MOSFET  DESCRIPTION The UTC 08NM65-V is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(on) < 7.3Ω @ VGS=10V, ID=0.4A * High breakdown voltage  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 08NM65L-TN3-R 08NM65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GDS Packing Tape Reel  MARKING www.