PV600BA Datasheet - UNIKC

PV600BA MOSFET

PV600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 10.8mΩ @VGS = 10V ID 10A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 10 8 40 Avalanche Current IAS 17.6 Avalanche Energy L =0.1mH EAS 15.5 Power Dissipation TA= 25 °C TA =70 °C PD 1.95 1.25 Juncti.

PV600BA Datasheet (736.05 KB)