PV563BA Datasheet (UNIKC) - P-Channel MOSFET

PV563BA, P-Channel MOSFET

PV563BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10V ID -9.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -9.5 -7.6 -40 Avalanche Current IAS -32 Avalanche Energy L=0.1mH EAS 53 Power Dissipation3 TA = 25 °C TA = 70 °C PD 3 2 J