PE610SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3mΩ @VGS = 10V ID 62A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 62 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 39 24 Pulsed Drain Current1 TA= 70 °C IDM 19 100 Avalanche Current IAS 34 Avalanche Energy L =0.1mH EAS 57.8 TC = 25 °C 20 Power Dis.
