PB5A3JW Datasheet - UNIKC

PB5A3JW Dual P-Channel MOSFET

PB5A3JW Dual P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 65mΩ @VGS = -4.5V ID -3.6A PDFN 2X2S 100% RG Test , 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM -3.6 -2.9 14 Power Dissipation TA = 25 °C TA = 70 °C PD 1.4 0.9 Operating Junction & Storag.

PB5A3JW Datasheet (705.75 KB)