P8315BD Datasheet - UNIKC

P8315BD N-Channel Transistor

P8315BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 83mΩ @VGS = 10V ID 20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 20 12 50 Avalanche Current IAS 20 Avalanche Energy L = 1mH EAS 207 Power Dissipation TC = 25 °C TC = 100 °C PD 73 29 Junction .

P8315BD Datasheet (474.67 KB)