P8010BD Datasheet - UNIKC

P8010BD N-Channel Transistor

P8010BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC = 25 °C TC = 100 °C VGS ID IDM IAS ±20 15 9 35 12 Avalanche Energy L =0.1mH EAS 7.2 MOSFET dV/dt Ruggedness Peak Diode Recovery dV/dt2 Power Dissipat.

P8010BD Datasheet (434.27 KB)