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P3506DTF
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
35mΩ @VGS = -10V
ID -20A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
-60
Gate-Source Voltage
VGS
±25
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
IDM
-20 -10 -100
Avalanche Current
IAS
-38
Avalanche Energy
L = 0.1mH
EAS
72
Power Dissipation
TC = 25 °C
PD
TC = 100 °C
26 10.4
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 4.8 62.5
UNITS °C / W
Ver 1.
P3506DTF Datasheet
