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P1504BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 15mΩ @VGS = 10V
ID 9A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current
TA = 25 °C TA = 70 °C
ID
IDM IAS
9 7.5 35 32
Avalanche Energy
L = 0.1mH
EAS
52
Power Dissipation
TA= 25 °C TA =70 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
2.5 1.6 -55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 25 50
UNITS °C / W
REV 1.
P1504BVG Datasheet
