NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
(22.86) -:i~~~)-j
Absolute Maximum Ratings at 25°C
Parameter 1 Collector-Emitter
rr--
1 Symbol Voltage 1 V,,, V ES0 L / P,,, TJ T STG
1 1
Rating 65 3.0 8.0
1 Units
1
I v I
V
Emitter-Base Voltage Collector Current (Peak).
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