_-_-. - NPN Silicon Microwave Power Transisror Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
Parameter Collector-EmitterVoltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation JunctionTemperature Symbol V CES V EBO ‘c P TOT TJ I TSTG 1 -65 Rating 75 3.0 14.1 214 200 Un.
PH1214-IOOEL_TycoElectronics.pdf
