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903 (22 85) J
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package
Absolute Maximum Ratinas at 25°C
I Parameter 1 Collector-EmitterVoltage Emitter-BaseVoltage Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature 1 Symbol ) I V,,, vm ‘c P TOT T, T SIG 1 1 I Ratin.
PH1214-55EL_TycoElectronics.pdf
