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MRF175LU - N-CHANNEL BROADBAND RF POWER FET

Features

  • yer in the gate region. Gate Termination.
  • The gates of these devices are essentially capacitors. Circuits that leave the gate open.
  • circuited or floating should be avoided. These conditions can result in turn.
  • on of the devices due to voltage build.
  • up on the input capacitor due to leakage currents or pickup. Cgd GATE Cds Cgs SOURCE.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175LU/D The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
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