M306N0FGTFP 60 W / 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON

Tyco Electronics

Description

SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6439/D The RF Line NPN Silicon RF Power Transistor ...designed primarily for wideband larg.

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Datasheet Specifications

Part number: M306N0FGTFP
Manufacturer: Tyco Electronics
File Size: 137.69 KB
Datasheet: M306N0FGTFP_TycoElectronics.pdf
Description: 60 W / 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON

Applications

* 2N6439 60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316
* 01, STYLE 1 MAXIMUM RATINGS
* Rating Collector
* Emitter Voltage Collector
* Base Voltage Emitter
* Base Voltage Total Device Dissipation @ TC = 25°C (1) Derate above 25°C S

M306N0FGTFP Distributors

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M306N0FGTFP 225 400 MHz CONTROLLED BROADBAND POWER TRANSISTOR NPN SILICON Tyco Electronics

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