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RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices
DU2880T
Absolute Maximum Ratings at 25°C
Thermal Resistance
Electrical Characteristics
I Parameter
Drain-Source Drain-Source Gate-Source Breakdown Voltage
at 25°C
1 Symbol
BVDSS
1 Min
65
1 Max ( Units 1
4.0 4.0 V mA pA V S pF pF PF dB % V,,=O.O V, 1,,=20.0 mA V,,=28.0 v,,=20.0 V&O.0 v,,=lo.o V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, V,,=O.O V v, v,,=o.o v
Test Conditions
Leakage Current
LeakageCurrent
‘DSS
‘GSS V GSITHI GM C ISS C ass %s GP % VSWR-T 13 60 2.0 2.
DU2880 Datasheet
