TTS3816B4E 2M x 16Bit x 4 Banks synchronous DRAM

Description

M.tec 2M x 16Bit x 4 Banks synchronous DRAM TTS3816B4E GENERAL .
The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits, fabricated with M’tec high perf.

📥 Download Datasheet

TTS3816B4E Datasheet Preview — Preview of TTS3816B4E PDF

Datasheet Specifications

Part number: TTS3816B4E
Manufacturer: TwinMOS
File Size: 302.99 KB
Datasheet: TTS3816B4E_TwinMOS.pdf
Description: 2M x 16Bit x 4 Banks synchronous DRAM

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four-banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

TTS3816B4E Distributors

📁 Related Datasheet

TTS TTS18NSH TTS18VSH TTS1A103 TTS1A104 TTS1A223

📌 All Tags

TTS3816B4E 16Bit Banks synchronous DRAM TwinMOS

TwinMOS TTS3816B4E-like datasheet