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TF3420 N-Channel Enhancement Mode Field Effect Transistor

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Description

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF3420 N-Channel Enhancement Mode Field Effect Transistor General .
The TF3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number
TF3420
Manufacturer
Tuofeng Semiconductor
File Size
375.63 KB
Datasheet
TF3420-TuofengSemiconductor.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) RDS(ON) < 42mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source

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