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8822 Dual N-Channel MOSFET

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Description

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8822 8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Descriptio.
The 8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number
8822
Manufacturer
Tuofeng Semiconductor
File Size
92.50 KB
Datasheet
8822-TuofengSemiconductor.pdf
Description
Dual N-Channel MOSFET

Features

* VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 38mΩ (VGS = 2.5V) TSSOP-8 Top View D1 D2 D1/D2 S1 S1 G1 1 2 3 4 8 D1/D2 7 S2 6 S2 5 G2 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. TF DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. TF RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Shenzhen Tuofeng Semiconductor

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