8810 Dual N-Channel MOSFET

Tuofeng Semiconductor

Description

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General .
The 8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: 8810
Manufacturer: Tuofeng Semiconductor
File Size: 241.90 KB
Datasheet: 8810-TuofengSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* VDS (V) = 20V ID = 6A (V GS = 4.5V) RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 2.5V) ESD Rating: 2000V HBM D1/D2 S1 S1 G1 TSSOP-8 Top View 18 27 36 45 D1/D2 S2 S2 G2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS

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8810 Dual N-Channel MOSFET Tuofeng Semiconductor

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