4812 Dual N-Channel MOSFET

Tuofeng Semiconductor

Description

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4812 4812 Dual N-Channel Enhancement Mode Field Effect Transistor General .
The 4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number: 4812
Manufacturer: Tuofeng Semiconductor
File Size: 173.14 KB
Datasheet: 4812-TuofengSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* VDS (V) = 30V ID = 8.0A (VGS = 10V) RDS(ON) < 22mΩ (VGS = 10V) RDS(ON) < 34mΩ (VGS = 4.5V) S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Shenzhen Tuofeng Semiconducto

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4812 Dual N-Channel MOSFET Tuofeng Semiconductor

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