Datasheet Details
| Part number | 4812 |
|---|---|
| Manufacturer | Tuofeng Semiconductor |
| File Size | 173.14 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
 4812 Datasheet
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General Description
The 4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
4812 is Pb-free (meets ROHS & Sony 259 specifications).
Key Features
- VDS (V) = 30V ID = 8.0A (VGS = 10V) RDS(ON) < 22mΩ (VGS = 10V) RDS(ON) < 34mΩ (VGS = 4.5V) S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 8.0 30 2 1.44 -55 to 150 Thermal Cha.