4803 - Dual P-Channel MOSFET

Tuofeng Semiconductor

Datasheet Details

The 4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) SOIC-8 Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -5 -20 2 1.4 -55 to 150.

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Published: Aug 28, 2016 |