2016 N-Channel Enhancement Mode Field Effect Transistor

Tuofeng Semiconductor

Description

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2016 2016 N-Channel Enhancement Mode Field Effect Transistor General .
The 2016 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: 2016
Manufacturer: Tuofeng Semiconductor
File Size: 190.59 KB
Datasheet: 2016-TuofengSemiconductor.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = 20V ID = 4.2 A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C

2016 Distributors

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2016 N-Channel Enhancement Mode Field Effect Transistor Tuofeng Semiconductor

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