2016 - N-Channel Enhancement Mode Field Effect Transistor

Tuofeng Semiconductor

Datasheet Details

Part number	2016
Manufacturer	Tuofeng Semiconductor
File Size	190.59 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	2016-TuofengSemiconductor.pdf

The 2016 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS (V) = 20V ID = 4.2 A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 4.2 15 1.4 0.9 -55 to 150 Thermal Characteristics Parameter M.

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Published: Aug 28, 2016 |