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TSD60R580WT/TSU60R580WT 600V 7A N-Channel SJ-MOSFET
TSD60R580WT/TSU60R580WT
600V 7A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
• 600V @TJ = 25 ℃ • Typ. RDS(on) = 0.5Ω • Ultra Low gate charge (typ. Qg = 14.